MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT35SM-8
STROBE FLASHER USE
CT35SM-8
OUTLINE DRAWING
15.9MAX.
Dimensions in mm
4.5
1.5
r
2
2
4
20.0
蠁
3.2
5.0
1.0
q
5.45
w
e
5.45
19.5MIN.
4.4
0.6
2.8
4
wr
q
GATE
w
COLLECTOR
e
EMITTER
r
COLLECTOR
e
q
隆V
CES ................................................................................
400V
隆I
CM ....................................................................................
200A
TO-3P
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS
Symbol
V
CES
V
GES
V
GEM
I
CM
T
j
T
stg
(Tc = 25擄C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Conditions
V
GE
= 0V
V
CE
= 0V, See notice 4
V
CE
= 0V, tw = 0.5s
See figure 1
Ratings
400
鹵30
鹵40
200
鈥?0 ~ +150
鈥?0 ~ +150
Unit
V
V
V
A
擄C
擄C
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
I
CES
I
GES
V
GE(th)
Parameter
(Tj = 25擄C)
Test conditions
I
C
= 1mA, V
GE
= 0V
V
CE
= 400V, V
GE
= 0V
V
GE
=
鹵40V,
V
CE
= 0V
V
CE
= 10V, I
C
= 1mA
Limits
Min.
450
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max.
鈥?/div>
10
鹵0.1
7.0
Unit
V
碌A(chǔ)
碌A(chǔ)
V
Feb.1999
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
CT35SM-8相關(guān)型號(hào)PDF文件下載
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英文版
DIAC (BIDIRECTIONAL DIODE THYRISTOR)|40V V(BO) MAX|50UA I(S)...
ETC
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英文版
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 200A I(C) | TO-...
ETC
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英文版
STROBE FLASHER USE
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英文版
STROBE FLASHER USE
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英文版
STROBE FLASHER USE
MITSUBISHI ...
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英文版
STROBE FLASHER USE
POWEREX [P...
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英文版
Toggle Switch SPDT Panel Mount
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英文版
Toggle Switch SPDT Panel Mount
1
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