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DATA SHEET

CT-32

DIAC

DO-35 CASE

DESCRIPTION

The Central Semiconductor CT-32 Diac functions as a trigger diode with a fixed voltage reference and low

breakover current. This device is manufactured in a hermetically sealed glass package to ensure high reliability.

MAXIMUM RATINGS (TA=25擄C)

Repetitive Peak On-state Current

tp=20碌s, f=120Hz

Operating and Storage

Junction Temperature

SYMBOL

ITRM

2.0

UNITS

A

TJ,Tstg

-40 to +125

擄C

ELECTRICAL CHARACTERISTICS (TA=25擄C)

SYMBOL

VBO*

| VBO1 鈥?VBO2 |

鈭哣

VO

IBO

IR

IP

tr

TEST CONDITIONS

C=22nF**

C=22nF**

VBO & VF @ 10mA

See Figure 2

C=22nF**

VR = 18V

See Figure 2

See Figure 3

MIN

28

5.0

5.0

50

10

0.3

2.0

MAX

36

3.0

UNITS

V

V

V

V

碌A(chǔ)

碌A(chǔ)

A

碌s

* Both directions.

**Capacitor connected in parallel with device.

(SEE REVERSE SIDE)

R0

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