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MITSUBISHI HVIGBT MODULES
CM800HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800HA-66H
q
I
C ...................................................................
800A
q
V
CES .......................................................
3300V
q
Insulated Type
q
1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130
114
57
鹵0.25
57
鹵0.25
4 - M8 NUTS
20
E
C
C
124
鹵0.25
140
40
C
E
G
C
CM
E
E
C
E
G
CIRCUIT DIAGRAM
3 - M4 NUTS
10.35
10.65
48.8
61.5
18
6 -
蠁
7 MOUNTING HOLES
15
40
5.2
38
28
LABEL
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
5
Aug.1998
30