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MITSUBISHI HVIGBT MODULES

CM400HG-66H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM400HG-66H

q

I

C ...................................................................

400A

q

V

CES .......................................................

3300V

q

High Insulated Type

q

1-element in a Pack

q

AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

73

鹵0.5

57

鹵0.25

2 - M8 NUTS

Dimensions in mm

29.7

2

17

鹵0.1

(2) C

124

鹵0.25

140

鹵0.5

44

鹵0.3

1

(1) E

E

G

C

36

E G

C

CIRCUIT DIAGRAM

5

21.6

鹵0.3

12.9

鹵0.3

4 -

蠁

7 MOUNTING HOLES

16.2

鹵0.3

screwing depth

min. 4

screwing depth

min. 16.5

41

鹵0.5

22

鹵0.3

17.4

鹵0.3

2.8

TAB # 110, T = 0.5

5.8

48

+1.0

0

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

5

鹵0.15

40.4

鹵0.5

LABEL

36.2

Jul. 2005

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