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CEP62A2/CEB62A2

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

20V, 55A, R

DS(ON)

= 10m鈩?@V

GS

= 4.5V.

R

DS(ON)

= 14m鈩?@V

GS

= 2.5V.

Super high dense cell design for extremely low R

DS(ON)

.

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

D

D

G

S

CEB SERIES

TO-263(DD-PAK)

G

G

D

S

CEP SERIES

TO-220

S

ABSOLUTE MAXIMUM RATINGS

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

a

Tc = 25 C unless otherwise noted

Symbol

V

DS

V

GS

I

D

I

DM

P

D

T

J

,T

stg

Limit

20

Units

V

V

A

A

W

W/ C

C

鹵

12

55

220

54

0.36

-55 to 175

Maximum Power Dissipation @ T

C

= 25 C

- Derate above 25 C

Operating and Store Temperature Range

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Symbol

R

胃JC

R

胃JA

Limit

2.8

62.5

Units

C/W

C/W

Specification and data are subject to change without notice .

1

Rev 1. 2006.January

http://www.cetsemi.com

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