Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON POWER TRANSISTOR
CDT13003
TO-220
Plastic Package
Applications
Suitable for Lighting, Switching Regulator and Motor Control
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Emitter Current Continuous
Peak (1)
Power Dissipation @ T
a
=25 潞C
Derate Above 25潞C
Power Dissipation @ T
c
=25 潞C
Derate Above 25潞C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering
Purpose: 1/8" from Case for 5 Seconds
(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%
ELECTRICAL CHARACTERISTICS (T
a
=25潞C unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Collector Cut Off Current
Emitter Cut Off Current
*Pulse Test:- PW=300碌s, Duty Cycle=2%
碌
CDT13003Rev_1 230306D
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
j,
T
stg
VALUE
600
400
9.0
1.8
3.5
0.75
1.5
2.25
4.5
1.4
11.2
50
480
- 65 to+150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ 潞C
W
mW/ 潞C
潞C
R
th (j-c)
R
th (j-a)
T
L
2.08
89
275
潞C/W
潞C/W
潞C
SYMBOL
V
CBO
*V
CEO(sus)
I
CBO
I
EBO
TEST CONDITION
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
V
CB
=600V
,
I
E
=0
V
CB
=600V
,
I
E
=0, T
c
=100潞C
V
EB
=9V, I
C
=0
MIN
600
400
-
-
TYP
-
-
-
-
MAX
-
-
1.0
5.0
1.0
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4