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C770PE Datasheet

  • C770PE

  • THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|TO-200VAR111

  • 3頁(yè)

  • ETC

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SPCO
INVERTER THYRISTOR
C770 & C770A
77mm / 1800V / 60-80us
Disc-type ceramic PRESSPAK package
Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction
is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate
structure.It is supplied in an industry accepted disc-type package , ready to mount using
commercially available heat dissipators and mechanical clamping hardware.
C770
ON-STATE CHARACTERISTIC
On-state current , It (amperes)
Blocking Voltage Code
C770__
MODEL
C770A__
V
DRM
/V
RRM
10000
Process Maximum
Pulsed Current
Initial Tj = 125 degC
1000
-40 to +125
o
C
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?
1800 Volts
C770 PN
C770 PS
1700
C770 PM
1600
C770 PE
1500
C770 PD
1400
Gate Drive Requirements:
open circuit voltage
internal impedance
rise time of s.s. current
minimum duration
30-40 V
10
鈩?/div>
0.5 - 1
碌s
10
碌s
100
0
1
2
3
4
5
6
7
8
On-state Voltage , Vt (volts)
THERMAL IMPEDANCE vs. ON-TIME
Zthj-c (deg C/W)
100
.01
C770
Non-Repetitive Half-Cycle
Peak Surge Current & I2t
Itsm (kA)
I2t (amp-sq-sec)
.02
10.E6
.001
50
5.E6
.0001
Rthj-case(dc) =
.012 degC/watt
.00001
0.1
1
10
100
1000
10000
On-Time (milliseconds)
10
1
10
1.E6
Pulse Width - milliseconds
S
ILICON
P
OWER
CO
RPORATION
175 GREAT VALLEY PARKWAY, MALVERN, PA 19355
USA
PG: 6.078 sh1 12/1/98

C770PE相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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  • 英文版
    THYRISTOR|REVERSE-CONDUCTING|1.4KV V(DRM)|TO-200VAR111
    ETC
  • 英文版
    THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|TO-200VAR111
    ETC
  • 英文版
    THYRISTOR|REVERSE-CONDUCTING|1.6KV V(DRM)|TO-200VAR111
    ETC
  • 英文版
    THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|TO-200VAR111
    ETC
  • 英文版
    THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|TO-200VAR111
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