鈥?/div>
10
碌m
Poly and Metal I Pitch
Via
Gate geometry
P-well junction depth
Description
The
5碌m
process is a double poly/double metal CMOS process with
an operating voltage range from 5 to 12 volts.
(13
Volts Maximum Operating Voltage.)
N+ junction depth
P+ junction depth
Gate oxide thickness
Inter poly oxide thick.
MOSFET Electrical Parameters
5 MICRON - 12 volts
Units
N Channel
min. typ. max.
min.
P Channel
typ. max.
Resistances (鈩?/sq.)
Conditions
min.
typ.
2700
1000
6
70
14
30
2000
10
90
20
55
0.032
3000
14
110
26
80
max.
Vt (50x5碌m)
Ids (50x5碌m)
Body Factor (50x50碌m)
Bvdss
Field Threshold
L Effective
0.40
0.65
20
1.2
0.90
0.40
0.65
6
0.5
0.90
V
碌A(chǔ)/碌m
鈭歷
V
V
碌m
saturation
Vds=Vgs=3v
Pwell
Pfield in Pwell
N+
18
18
24
>30
1.8
18
18
24
25
2.8
Ids=1
碌A(chǔ)
Ids = 14碌A(chǔ)
L drawn =
5碌m
P+
Poly gate
Poly capacitor
Metal I
Capacitances (fF/碌m
2
)
min.
Inter-poly
Gate oxide
N+ Junction
P+ Junction
0.35
0.41
typ.
0.50
0.43
0.34
0.14
NPN vertical
max.
0.65
0.46
Bipolar gain
min.
typ.
275
max.
Condition
Vce = 5
Volts
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For More Information:
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J2L 1S7
Tel :
Fax
email:
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