RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below
for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
1 2
3
Pin Config
1. Base
2. Collector
3. Emitter
4. Collector
Dimensions in millimeters
Electrical Characteristics (Ta=25
o
C)
Part #
Polari ty V
CBO
(V)
Mi n
NPN
NPN
NPN
PNP
PNP
NPN
NPN
NPN
NPN
PNP
NPN
NPN
PNP
NPN
3
V
C EO
(V)
Mi n
70
40
60
70
50
45
50
70
100
100
60
100
100
100
4
V
EBO
(V)
Mi n
7
5
5
5
5
5
5
5
5
5
5
5
5
5
5
P
D
(W)
36
36
36
40
40
40
40
40
30
30
40
40
40
65
I
C
(A)
4
4
4
7
7
4
7
7
2
2
3
3
3
6
I
CES
@ V
CE
h
FE
h
FE
@ I
C
(uA)
(A)
Mi n Max
Max
500
4
500
4
500
4
1000
1
1000
1
1000
1
1000
1
1000
1
200
200
200
200
200
400
50
50
50
60
40
45
40
60
100
100
60
100
60
100
30
30
20
30
2.3
30
2.3
25
10
30
2.3
30
2.3
40
15
40
15
25
10
25
10
25
10
30
15
120
120
80
150
150
100
150
150
0.5
1.0
1.5
2.0
7.0
2.5
7.0
1.5
4.0
2.5
7.0
2.0
7.0
0.2
1.0
0.2
1.0
1.0
3.0
1.0
3.0
1.0
3.0
0.3
3.0
V
CE
(V)
4
4
4
4
4
4
4
2
2
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
V
CE
(SAT)
2N5294
2N5296
2N5298
2N6107
2N6109
2N6121
2N6290
2N6292
B D 239C
B D 240C
B D 241A
B D 241C
B D 242C
B D 243C
1
80
60
80
80
60
45
60
80
115
115
70
115
115
100
(V)
Max
1.0
1.0
1.0
3.5
1.0
3.5
1.0
0.6
1.4
1.0
3.5
1.0
3.5
0.7
0.7
1.2
1.2
1.2
1.5
V
BE (SAT)
@ I
C
(V)
(A)
Max
0.5
1.0
1.5
7.0
2.0
7.0
2.5
1.5
4.0
2.5
7.0
2.0
7.0
1.0
1.0
3.0
3.0
3.0
6.0
f
T
@ I
C
(MHz)
(mA)
Mi n
0.8
0.8
0.8
10
10
2.5
4
4
3
3
3
3
3
5
3
200
200
200
500
500
1000
500
500
200
200
500
500
200
500
I
CE0
2
I
CBO
V
CES
I
CER
f
T
Typical Values
1
2
3
