Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
PNP SILICON EPITAXIAL POWER TRANSISTORS
C45C5,11
TO-220
Designed for Various Specific and General Purpose Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
SYMBOL
C45C5
C45C11
UNIT
V
V
V
A
A
A
W
W
deg C
VCEO
45
80
Collector -Emitter Voltage
VCES
55
90
Collector -Emitter Voltage
VEBO
5
5
Emitter Base Voltage
IC
4
4
Collector Current Continuous
ICM
6
6
Peak*
IB
2
2
Base Current
PD
1.67
1.67
Power Dissipation @ Ta=25 deg C
30
30
Power Dissipation @ Tc=25 deg C
Tj, Tstg
-55 to +150
55 to +150
Operating and Storage Junction
Temprature Range
THERMAL RESISTANCE
Rth(j-a)
75
75
Junction to Ambient
Rth(j-c)
4.2
4.2
Junction to Case
ELECTRICAL CHARACTERISTICS (TC=25 deg C Unless Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
VCEO(sus)* IC=100mA, IB=0
Collector Emitter Sustaining Voltage
45
-
C45C5
80
-
C45C11
ICES
VCE=Rated VCES
-
-
Collector Cutt off Current
IEBO
VEB=5V, IC=0
-
-
Emitter Cut off Current
VCE(Sat)* IC=1A, IB=50mA
-
-
Collector Emitter Saturation Voltage
VBE(Sat)* IC=1A, IB=100mA
-
-
Base Emitter Saturation Voltage
hFE*
IC=0.2A, VCE=1V
40
-
Dc Current Gain
IC=1A, VCE=1V
20
-
Dynamic Characteristics
ft
VCE=4V, IC=20mA
-
40
Transition Frequency
Ccbo
VCB=10V, IE=0
-
-
Collector Output Capacitance
f=1MHz
Switching Time
td +tr
-
50
Delay Time
IC= 1A, IB1=1B2
Rise Time
ts
0.1A, VCC=30V,
-
500
Storage Time
tf
tp=25 usec
-
50
Fall Time
*Pulse Test Pulse Width =300ms, Duty Cycle=2%
deg C
deg C
MAX
-
-
10
100
0.5
1.3
120
-
-
125
UNIT
V
V
uA
uA
V
V
MHz
pF
-
-
-
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 1 of 3
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