Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
,6,62
/LF 46&/
NPN SILICON EPITAXIAL TRANSISTOR
C44C8 , C44C11
TO-220
Plastic Package
Complementary C45C Series
General Purpose Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25潞C)
DESCRIPTION
Collector -Emitter Voltage(VBE=0)
Collector -Emitter Voltage(open base)
Emitter Base Voltage(open collector)
Collector Current Continuous
Collector Current Continuous (Peak*)
Base Current
Total Power Dissipation upto Ta=25潞C
Total Power Dissipation upto Tc=25潞C
Junction Temperature
Storage Temperature
THERMAL RESISTANCE
Junction to Case
Junction to Ambient
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
Tj
T
stg
C44C8
70
60
C44C11
90
80
UNIT
V
V
V
A
A
A
W
W
潞C
潞C
5.0
4.0
6.0
2.0
1.67
30
150
-65 to +150
R
th (j-c
)
R
th (j-a)
4.2
75
潞C/W
潞C/W
ELECTRICAL CHARACTERISTICS (Tc=25潞C Unless Otherwise Specified)
DESCRIPTION
SYMBOL
TEST CONDITION
VB
E
=0,V
CE
=Rated V
CES
I
CES
Collector Cut off Current
V
EB
=5V, I
C
=0
I
EBO
Emitter Cut off Current
V
CEO(sus)
* I
C
=100mA, I
B
=0
Collector Emitter Sustaining voltage
I
C
=1A, I
B
=50mA
V
CE(sat)
*
Collector Emitter Saturation Voltage
I
C
=1A, I
B
=100mA
V
BE(sat
)*
Base Emitter Saturation Voltage
I
C
=0.2A,V
CE
=1V
h
FE
*
DC Current Gain
h
FE
*
f
T
C
cbo
I
C
=2A,V
CE
=1V
MIN
I
C
=20mA,V
CE
=4V
typ
V
CB
=10V,I
E
=0,f=1MHz
C44C8
<10
<100
>60
C44C11
>80
<0.5
<1.3
100-220
20
50
100
UNIT
碌A
碌A
V
V
V
Transition frequency
Collector Capacitance
SWITCHING TIME
Delay Time + Rise Time
Storage Time + Fall Time
MHz
pF
td + tr
ts
tf
I
C
=1A,I
B1
=I
B2
=0.1A
Vcc=30V, tp=25碌s
Vcc=30V, tp=25碌s
typ
typ
typ
100
500
75
ns
ns
ns
*Pulse Test PW=300碌s, Duty Cycle=2%
Continental Device India Limited
Data Sheet
Page 1 of 3
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