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C30T04QH-11A Datasheet

  • C30T04QH-11A

  • Schottky Barrier Diode

  • 6頁(yè)

  • NIEC

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SBD
T y p e :
C30T04QH-11A
30T0 QH-
T04
OUTLINE DRAWING
FEATURES
*Tabless TO-220
*Dual Diodes 鈥?Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150
擄C
operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Approx Net Weight:
1.45g
Symbol
V
RRM
V
RRSM
I
O
I
F(RMS)
I
FSM
T
jw
T
stg
C30T04QH-11A
40
45(pulse width
鈮?/div>
1碌s duty
鈮?/div>
1/50)
50 Hz Full Sine Wave
30
Tc=114擄C
Resistive Load
33.3
50Hz Full Sine Wave ,1cycle
250
Non-repetitive
-40 to +150
-40 to +150
Unit
V
V
A
A
A
擄C
擄C
Electrical
鈥?/div>
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
I
RM
V
FM
Conditions
Tj= 25擄C, V
RM
= V
RRM
per arm
Tj= 25擄C, I
FM
= 15 A
per arm
Min.
-
-
-
Typ.
-
-
-
Max.
1
0.61
1.5
Unit
mA
V
擄C
/W
Rth
(
j-c) Junction to Case

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