N-Type Silicon PIN Photodetectors
C30807, C30808, C30809, C30810, C30822, C30831
EVERYTHING
IN A
NEW
LIGHT.
Description
This family of N-type silicon p-i-n
photodiodes is designed for use in a wide
variety of broad band low light level
applications covering the spectral range
from below 400 to over 1100 nm.
The different types making up this series
provide a broad choice in photosensitive
areas and in time response
characteristics. Each of the types is
antireflection coated to enhance
responsivity at 900 nm.
These characteristics make the devices
highly useful in HeNe and GaAs laser
detection systems and in optical
demodulation, data transmission, ranging,
and high-speed switching applications.
Features
鈥?Broad Range of Photosensitive Surface Areas
0.2 mm2 to 100 mm2
鈥?Low Operating Voltage VR = 45V
鈥?Anti-Reflection Coated to Enhance Responsivity at 900 nm
鈥?Hermetically-Sealed Packages
鈥?Spectral Response Range 400 to 1100 nm
Maximum Ratings, Absolute-Maximum Values (All Types)
DC Reverse Operating Voltage V
R
. . . . . . . . . . . . . . . .100 max. V
Photocurrent Density, jp at 22擄C:
Average value, continuous operation . . . . . . . . . .5 mA/mm
2
Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm
2
Forward Current, I
F
:
Average value, continuous operation . . . . . . . . . .10 max. mA
Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 max. mA
Ambient Temperature:
Storage, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . .-60 to +100擄C
Operating, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . .-40 to +80擄C
Soldering (for 5 seconds) . . . . . . . . . . . . . . . . . . . . . . . .200擄C
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