Description
The PerkinElmer family of large-area InGaAs
PIN photodiodes provide high responsivity
from 800 nm to 1700 nm for applications
including optical power meters, fiber optic test
equipment, near-IR spectoscopy and
instrumentation. All devices are planar
passivated and feature low capacitance for
extended bandwidth, and high shunt
resistance for maximum sensitivity. Typical
devices feature <1% non-linearity to optical
powers >+13 dBm (20 mW), and uniformity
within 鹵2% across the detector active area.
Typical responsivity of 0.2 A/W at 850 nm for
our large-area InGaAs devices allows use of
a single detector in fiber optic test
instrumentation designed to operate at 850,
1300, and 1550 nm.
Devices are available with active areas from
0.5 mm to 3.0 mm in TO-type packages or on
thermoelectric coolers for increased sensitivity
(see below). Photodiodes can also be
mounted on customized ceramic sub-mounts
to suit specific application requirements.
PerkinElmer Optoelectronics Canada is
qualified to ISO-9001 and operates to MIL-Q-
9858A and AQAP-1 quality standards. All
devices undergo extended life-test and
periodic process qualification programs to
assure high reliability. In addition, all
production devices are sourced from a
qualified wafer, screened with a 16 hour,
200擄C burn-in at -10V bias (C30619 and
C30641) or -5V (C30642 and C30665), and
tested to meet responsivity, spectral noise,
capacitance, shunt resistance and dark
current specifications.
Large-Area InGaAs
Photodiodes
C30619, C30641, C30642, C30665
EVERYTHING
IN A
NEW
LIGHT.
Features
鈥?0.5, 1.0, 2.0, and 3.0 mm diameters
鈥?High responsivity from 850 nm to 1550 nm
鈥?High shunt resistance, low dark current
鈥?TE-cooled package options
鈥?Low capacitance for fast response times
Applications
鈥?Power meters
鈥?Fiber identifiers
鈥?Laser burn-in racks
鈥?Near infrared instrumentation
鈥
.T.I.R. spectroscopy
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