1.5 Micron CMOS Process Family
Features
鈥?LO
V
MOS Processes (2.7~3.6 Volts Low Voltage Option)
鈥?1.2 Volts Very Low Voltage Option
鈥?5.5 Volts Maximum Operating Voltage
鈥?Double Poly / Double Metal
鈥?3 碌m Poly and Metal I Pitch
鈥?ProToDuction
TM
Option for low cost prototypes
鈥?150mm Wafers
Process parameters
1.5碌m
Units
Metal I pitch (width/space)
Metal II pitch (width/space)
Poly pitch (width/space)
Contact
Via
Gate geometry
P-well junction depth
N+ junction depth (5V&3V / 1.2V)
P+ junction depth
Gate oxide thickness
Inter poly oxide thickness
1.5 / 1.5
2.0 / 1.8
1.5 / 1.5
1.5 x 1.5
1.8 x 1.8
1.5
3.0
0.28 / 0.20
0.28
270
480
碌m
碌m
碌m
碌m
碌m
碌m
碌m
碌m
碌m
脜
脜
Description
The 1.5碌m process provides the flexibility, speed and packing density needed
in mixed signal designs. The aggressive design rules make it comparable to
most 1.2 碌m processes. 3 volts and a 1.2 volts options are also available for low
voltage applications; they offer low and matched threshold voltages for
improved dynamic range.
Technology outline
鈥?Drain Engineered Structure to Ensure Reliability against Hot-Carrier Injection
鈥?Planarization with SOG Sandwich Structure
鈥?Nitride Passivation for Reliability against Moisture
鈥?Latchup Free Process on Non-Epi Material Achieved with Optimized I/O Protection
MOSFET Electrical Parameters
1.5 MICRON - 1.2 volts
N Channel
min. typ. max.
Vt (50x1.5碌m)
Ids (50x1.5碌m)
Gain
尾
(50x1.5碌m)
Body Factor (50x50碌m)
Bvdss (50x1.5碌m)
Subthreshold Slope
Substrate Current
Field Threshold
L Effective
Gate Propagation Delay
Propagation Delay Time per Stage
(47 Stage Ring Oscillator)
1.5 MICRON - 3 volts
N Channel
min. typ. max.
P Channel
min. typ. max.
1.5 MICRON - 5 volts
Units
Conditions
N Channel
min. typ. max.
P Channel
min. typ. max.
V
碌A/碌m
mA/V
2
Saturation
Vds=Vgs=5V
Linear (1.2V&3.0V)
Saturation (5V)
P Channel
min. typ. max.
0.30 0.40 0.50 0.30 0.40 0.50 0.35 0.50 0.65 0.35 0.50 0.65 0.55 0.70 0.85 0.55 0.70 0.85
260
2.92
0.50
5
10
85
1.1
10
15
1.27
10
5
110
1.05
0.77
9
105
NA
14
1.12
10
7
280
3.50
0.52
12
87
0.26
15
1.09
10
7
120
1.05
0.75
12
106
NA
14
1.05
10
10
196 240
2.90
0.45
12
93
0.21
17
1.2
10
10
78
100
0.80
0.81
12
101
NA
20
1.2
鈭歷
V
mV/dec.
碌A/碌m
V
碌m
Ids=20nA
Vds=0.1V
Vds=5.5V, Vgs=2.3V
Ids = 1碌A/square
Ldrawn =1.5碌m
P 6.3/1.5
N 2.3/1.5
Typ. = 2.4 ns @1.2V
Typ. = 530 ps @3.3V
Typ. = 380 ps @5.0V
www.dalsasemi.com
For More Information:
DALSA Semiconductor Sales
18 Boulevard de l鈥橝茅roport
Bromont, Qu茅bec, Canada
J2L 1S7
Tel :
Fax
email:
(450) 534-2321 ext. 1448
(800) 718-9701
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dalsasales@dalsasemi.com
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