廬
ISO 9001 Registered
Process C1232
CMOS 1.2碌m
EEPROM with Lateral PNP
Electrical Characteristics
T=25
o
C Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Punch Through Voltage
Poly Field Threshold
Symbol
VT
N
緯
N
尾
N
I
DSATN
BVDSS
N
VTF
P(N)
Minimum
0.30
0.35
64
16
5
8
Minimum
鈥?0.20
0.30
13
45
Minimum
鈥?0.65
0.5
20
鈥?
鈥?
鈥?
Minimum
84
340
200
Typical
0.475
0.45
78
25
Maximum
0.65
0.55
92
40
Unit
V
V
1/2
碌A(chǔ)/V
2
mA
V
V
Unit
V
V
1/2
mA
碌A(chǔ)/V
2
Unit
V
V
1/2
碌A(chǔ)/V
2
mA
V
V
Unit
nm
nm
鈩?
V
V
Cycles
V
Unit
V
Comments
100x10碌m
100x100碌m
100x100碌m
100x1.5碌m
N-Channel Native Transistor Symbol
Threshold Voltage
VT
ZBN
緯
ZBN
Body Factor
Saturation Current
I
DSATN
Conduction Factor
尾
ZBN
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Punch Through Voltage
Poly Field Threshold Voltage
EECMOS Characteristics
Tunnel Oxide Thickness
Interpoly Oxide Thickness
Buried N+ Sheet Res.
Initial Program/Erase Window
Unprog. Memory Threshold
Endurance
Programming Voltage
Lateral PNP
Beta
Early Voltage
Symbol
VT
P
緯
P
尾
P
I
DSATP
BVDSS
P
VTF
P(P)
Symbol
T
TUNLOX
T
P1P2
蟻
BN+
V
T
VPP
Symbol
H
FE
V
AP
Typical
0.37
0.45
15.7
55
Typical
鈥?0.475
0.6
25
鈥?0
Maximum
0.52
0.60
18.9
65
Maximum
0.30
0.7
30
鈥?6
Comments
100x2.5碌m
100x2.5碌m
100x2.5碌m
100x100碌m
Comments
100x1.2碌m
100x1.2碌m
100x100碌m
100x1.5碌m
Typical
88
390
300
3.0
3.0
14
Typical
35
TBD
Maximum
92
440
400
Comments
10,000
12
Minimum
10
17
Maximum
100
Comments
漏 IMP, Inc.
81
1
2
