鈥?/div>
Device Marking: Logo, Device Type, e.g., C122F1, Date Code
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Peak Repetitive Off鈥揝tate Voltage(1)
(TJ = 25 to 100擄C, Sine Wave,
50 to 60 Hz; Gate Open)
C122F1
C122B1
On-State RMS Current
(180擄 Conduction Angles; TC = 75擄C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TC = 75擄C)
Circuit Fusing Considerations
(t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width = 10
碌s,
TC = 70擄C)
Forward Average Gate Power
(t = 8.3 ms, TC = 70擄C)
Forward Peak Gate Current
(Pulse Width = 10
碌s,
TC = 70擄C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDRM,
VRRM
50
200
IT(RMS)
ITSM
8.0
90
Amps
Amps
1
A2s
Watts
Watt
1
2.0
鈥?40 to
+125
鈥?40 to
+150
Amps
擄C
擄C
2
3
TJ
Tstg
4
2
3
Value
Unit
Volts
4
http://onsemi.com
SCRs
8 AMPERES RMS
50 thru 200 VOLTS
G
A
K
I2t
PGM
PG(AV)
IGM
34
5.0
0.5
TO鈥?20AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device
C122F1
C122B1
Package
TO220AB
TO220AB
Shipping
500/Box
500/Box
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
漏
Semiconductor Components Industries, LLC, 1999
1
February, 2000 鈥?Rev. 2
Publication Order Number:
C122F1/D
1
2
3
4
