廬
ISO 9001 Registered
Process C1219
CMOS 1.2碌m
EEPROM
Electrical Characteristics
T=25
o
C Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Punch Through Voltage
Poly Field Threshold
Symbol
VT
N
緯
N
尾
N
I
DSATN
BVDSS
N
VTF
P(N)
Minimum
0.30
0.35
64
16
5
8
Typical
0.475
0.45
78
25
Maximum
0.65
0.55
92
40
Unit
V
V
1/2
碌A(chǔ)/V
2
mA
V
V
Comments
100x10碌m
100x100碌m
100x100碌m
100x1.5碌m
N-Channel Native Transistor Symbol
Threshold Voltage
VT
ZBN
緯
ZBN
Body Factor
Saturation Current
I
DSATN
Conduction Factor
尾
ZBN
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
緯
P
尾
P
I
DSATP
BVDSS
P
VTF
P(P)
Minimum
鈥?0.20
0.30
13
45
Minimum
鈥?0.65
0.5
20
鈥?
鈥?
鈥?
Typical
0.37
0.45
15.7
55
Typical
鈥?0.475
0.6
25
鈥?0
Maximum
0.52
0.60
18.9
65
Maximum
鈥?0.30
0.7
30
鈥?6
Unit
V
V
1/2
mA
碌A(chǔ)/V
2
Unit
V
V
1/2
碌A(chǔ)/V
2
mA
V
V
Comments
100x2.5碌m
100x2.5碌m
100x2.5碌m
100x100碌m
Comments
100x1.2碌m
100x1.2碌m
100x100碌m
100x1.5碌m
EECMOS Characteristics
Tunnel Oxide Thickness
Interpoly Oxide Thickness
Buried N+ Sheet Res.
Initial Program/Erase Window
Unprog. Memory Threshold
Endurance
Programming Voltage
Symbol
T
TUNLOX
T
P1P2
蟻
BN+
V
T
VPP
Minimum
84
340
200
Typical
88
390
300
3.0
3.0
14
Maximum
92
440
400
10,000
12
17
Unit
nm
nm
鈩?
V
V
Cycles
V
Comments
漏 1999 IMP, Inc.
59
1
2
