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廬

ISO 9001 Registered

Process C1210

CMOS 1.2碌m

Zero Threshold Devices

Electrical Characteristics

N-Channel Transistor

Threshold Voltage

Body Factor

Conduction Factor

Effective Channel Length

Width Encroachment

Punch Through Voltage

Poly Field Threshold Voltage

Zero Vt N-Channel Transis.

Threshold Voltage

Body Factor

Conduction Factor

Saturation Current

Symbol

VT

N

緯

N

尾

N

Leff

N

鈭哤

N

BVDSS

N

VTF

P(N)

Symbol

VT

ZLN

緯

ZLN

尾

ZLN

I

DSATZN

Minimum

0.55

64

0.8

9

10

Minimum

0.00

75

28

Typical

0.15

0.348

90

34

Typical

0.75

0.34

75

1.0

0.6

T=25

o

C Unless otherwise noted

Maximum

Unit

Comments

0.95

V

100x1.2碌m

1/2

V

100x1.2碌m

2

86

碌A(chǔ)/V

100x100碌m

1.2

碌m

100x1.2碌m

碌m

Per side

V

V

Maximum

0.30

105

40

Unit

V

V

1/2

碌A(chǔ)/V

2

mA

Comments

100x100碌m

100x100碌m

100x100碌m

100x1.5碌m

P-Channel Transistor

Threshold Voltage

Body Factor

Conduction Factor

Effective Channel Length

Width Encroachment

Punch Through Voltage

Poly Field Threshold Voltage

Symbol

VT

P

緯

P

尾

P

Leff

P

鈭哤

P

BVDSS

P

VTF

P(P)

Minimum

鈥?.7

21

0.9

鈥?.0

鈥?0.0

Typical

鈥?.9

0.38

25

1.1

0.8

Maximum

鈥?.1

29

1.3

Unit

V

V

1/2

碌A(chǔ)/V

2

碌m

碌m

V

V

Comments

100x1.2碌m

100x1.2碌m

100x100碌m

100x1.2碌m

Per side

Zero Vt P-Channel Transis.

Threshold Voltage

Body Factor

Conduction Factor

Saturation Current

Symbol

VT

ZLP

緯

ZLP

尾

ZLP

I

DSATZP

Minimum

鈥?.3

21

鈥?1

Typical

鈥?.1

0.36

26

鈥?5

Maximum

0.1

31

鈥?9

Unit

V

V

1/2

碌A(chǔ)/V

2

mA

Comments

100x100碌m

100x100碌m

100x100碌m

100x1.5碌m

漏 IMP, Inc.

47

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