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C1210C104K5RACTR Datasheet

  • C1210C104K5RACTR

  • RF LDMOS Wideband Integrated Power Amplifiers

  • 594.68KB

  • 16頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
MW4IC001MR4
Rev. 3, 1/2005
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC001 wideband integrated circuit is designed for use as a distortion
signature device in analog predistortion systems. It uses Freescale鈥檚 newest
High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip
design makes it usable from 800 MHz to 2170 MHz. The linearity performances
cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and
W - CDMA.
鈥?/div>
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power 鈥?900 mW PEP
Power Gain 鈥?13 dB
Efficiency 鈥?38%
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
N Suffix Indicates Lead - Free Terminations
鈥?/div>
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MW4IC001NR4
MW4IC001MR4
800 - 2170 MHz, 900 mW, 28 V
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
4.58
0.037
- 65 to +150
150
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case @ 85擄C
Symbol
R
胃JC
Value
27.3
Unit
擄C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
0 (Minimum)
M1 (Minimum)
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
擄C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MW4IC001NR4 MW4IC001MR4
1
RF Device Data
Freescale Semiconductor

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