鈥?/div>
Device Marking: Device Type, e.g., C106B, Date Code
MAXIMUM RATINGS
(TJ = 25擄C unless otherwise noted)
Rating
Peak Repetitive Off鈥揝tate Voltage(1)
(Sine Wave, 50鈥?0 Hz, RGK = 1 k鈩?
TC = 鈥?0擄 to 110擄C)
C106B
C106D, C106D1
C106M, C106M1
On-State RMS Current
(180擄 Conduction Angles, TC = 80擄C)
Average On鈥揝tate Current
(180擄 Conduction Angles, TC = 80擄C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = +110擄C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width 1.0
碌sec,
TC = 80擄C)
Symbol
VDRM,
VRRM
200
400
600
IT(RMS)
IT(AV)
ITSM
4.0
2.55
20
Amps
Amps
Amps
1
I2t
PGM
PG(AV)
IGM
TJ
Tstg
鈥?/div>
1.65
0.5
0.1
0.2
鈥?40 to
+110
鈥?40 to
+150
6.0
A2s
Watt
Watt
Amp
C106B
擄C
擄C
in. lb.
C106D
C106D1
C106M
C106M1
TO225AA
TO225AA
TO225AA
TO225AA
TO225AA
500/Box
500/Box
500/Box
500/Box
500/Box
2
3
Value
Unit
Volts
Preferred Device
http://onsemi.com
SCRs
4 AMPERES RMS
200 thru 600 VOLTS
G
A
K
3
2 1
TO鈥?25AA
(formerly TO鈥?26)
CASE 077
STYLE 2
PIN ASSIGNMENT
Cathode
Anode
Gate
v
v
v
Forward Average Gate Power
(Pulse Width 1.0
碌sec,
TC = 80擄C)
Forward Peak Gate Current
(Pulse Width 1.0
碌sec,
TC = 80擄C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque(2)
ORDERING INFORMATION
Device
Package
Shipping
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
漏
Semiconductor Components Industries, LLC, 2000
Preferred
devices are recommended choices for future use
and best overall value.
1
May, 2000 鈥?Rev. 3
Publication Order Number:
C106/D
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