C08C 0.8碌m 5V CMOS Process
DALSA
Semiconductor鈥檚
proven ability to
transfer and
develop
customized
processes is
unmatched in
the industry
C08C Overview
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0.8碌m 5V CMOS process, compatible with most
0.8碌m CMOS processes in the industry.
Twin-tub, P or N type epi or bulk substrates
Single or double poly
Two or three layer metal process
Features
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Propagation delay: Tpd = 200ps
High value (10k:/sq.) and low TCR poly
resistor options
Fully transportable to C08E and C08G high
voltage processes
ProToDuction樓 option for low-cost
prototyping
BSIM3v3.22 models available in Hspice and
Spectre
Comprehensive mixed signal Cadence
Foundry Design Kit (FDK) available
Applications
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All 5V digital, analog or mixed signal circuits
Layout Rules
Layer
Poly 1
Poly2
Contact
Metal 1
Via
Metal 2
Via 2
Metal 3
Width (碌m)
0.8
1.0
0.9x0.9
1.1
1.0x1.0
1.2
2.0x2.0
3.0
Space (碌m)
0.9
1.2
0.8
1.0
1.0x1.0
1.1
2.0
2.4
Mixed Signal Capabilities
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5V double poly capacitor (1.05fF/碌m虜)
High value poly resistor option (10k:/sq)
5V 0.8碌m cmos
Polysilicon fuses
Digital gate count 1.8K gates/mm虜
Simplified Cross-Section of 5V CMOS
5V NM OS
S
G
D
B
B
n+
5 V PM O S
S
G
D
n+
n+
P-W e ll
p+
su b s trate n o r p
p+
p+
N -W e ll
26-Sep-02
03-70-00146-00
www.dalsasemi.com
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