廬
ISO 9001 Registered
Process C0810
CMOS 0.8碌m
High-Resistance Poly for Analog
Electrical Characteristics
T=25
o
C Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Bottom Poly Sheet Res.
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
High Resistance Poly
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to Silicon
Metal-2 to Metal-1
Poly-1 to Poly-2
Symbol
VT
N
緯
N
尾
N
Leff
N
鈭哤
N
BVDSS
N
VTF
P(N)
Symbol
VT
P
緯
P
尾
P
Leff
P
鈭哤
P
BVDSS
P
VTF
P(P)
Symbol
蟻
N-well(f)
蟻
N+
x
jN+
蟻
P+
x
jP+
T
GOX
T
FIELD
蟻
POLY1
蟻
POLY2
蟻
M1
蟻
M2
T
PASS
蟻
HI-POLY
Symbol
C
OX
C
M1P
C
M1S
C
MM
C
PP
Minimum
0.6
75
Typical
0.8
0.74
94
0.8
0.3
13
17
Typical
鈥?0.9
0.57
31
0.85
0.4
鈥?2
鈥?7
Typical
0.65
60
0.25
90
0.4
17.5
700
23
23
60
30
200+900
2.0
Typical
1.97
0.046
0.028
0.038
0.822
Maximum
1.0
115
Unit
V
V
1/2
碌A(chǔ)/V
2
碌m
碌m
V
V
Unit
V
V
1/2
碌A(chǔ)/V
2
碌m
碌m
V
V
Unit
K鈩?
鈩?
碌m
鈩?
碌m
nm
nm
鈩?
鈩?
m鈩?
m鈩?
nm
K鈩?
Unit
fF/碌m
2
fF/碌m
2
fF/碌m
2
fF/碌m
2
fF/碌m
2
Comments
100x0.8碌m
100x0.8碌m
100x100碌m
100x0.8碌m
Per side
7
10
Minimum
鈥?0.7
25
Maximum
鈥?.1
37
Comments
100x0.8碌m
100x0.8碌m
100x100碌m
100x0.8碌m
Per side
鈥?
鈥?0
Minimum
0.50
45
68
Maximum
0.80
75
112
Comments
n-well
15
15
40
20
1.5
Minimum
32
32
80
40
2.5
Maximum
oxide+nit.
Comments
0.69
1.015
漏 IMP, Inc.
15
1
2
