Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated, high efficiency
rectifier diodes in a plastic envelope
featuring low forward voltage drop,
ultra fast reverse recovery times and
soft recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general, where both low
conduction losses and low switching
losses are essential.
BYV74 series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
PARAMETER
BYV74-
Repetitive peak reverse
voltage
Forward voltage
Average output current
(both diodes conducting)
Reverse recovery time
MAX.
300
300
1.12
30
60
MAX.
400
400
1.12
30
60
MAX.
500
500
1.12
30
60
UNIT
V
V
A
ns
PINNING - SOT93
PIN
1
2
3
tab
DESCRIPTION
Anode 1 (a)
Cathode (k)
Anode 2 (a)
Cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a1
1
k2
1
2
3
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-300
300
300
300
MAX.
-400
400
400
400
30
27
43
30
150
160
112
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
藲C
藲C
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
T
mb
鈮?/div>
136藲C
Average output current (both
diodes conducting)
1
RMS output current (both
diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
I
2
t for fusing
Storage temperature
Operating junction temperature
square wave;
未
= 0.5;
T
mb
鈮?/div>
94 藲C
sinusoidal; a = 1.57;
T
mb
鈮?/div>
98 藲C
t = 25
碌s; 未
= 0.5;
T
mb
鈮?/div>
94 藲C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
t = 10 ms
I
O(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
1
Neglecting switching and reverse current losses.
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.
August 1996
1
Rev 1.200
1
2
3
4
5
6
