Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
GENERAL DESCRIPTION
Glass passivated, high efficiency,
dual, rectifier diodes in a full pack,
plastic envelope, featuring low
forward voltage drop, ultra-fast
recovery times and soft recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
BYV72F series
QUICK REFERENCE DATA
SYMBOL
V
RRM
V
F
I
O(AV)
t
rr
PARAMETER
BYV72F-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.90
20
28
MAX.
150
150
0.90
20
28
MAX.
200
200
0.90
20
28
UNIT
V
V
A
ns
PINNING - SOT199
PIN
1
2
3
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
PIN CONFIGURATION
case
SYMBOL
a1
1
k2
1
2
3
a2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
PARAMETER
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
1
Output current (both diodes
conducting)
2
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I
2
t for fusing
Storage temperature
Operating junction temperature
square wave;
未
= 0.5;
T
hs
鈮?/div>
78 藲C
sinusoidal; a = 1.57;
T
hs
鈮?/div>
78 藲C
t = 25
碌s; 未
= 0.5;
T
hs
鈮?/div>
78 藲C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
t = 10 ms
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
20
20
20
30
150
160
112
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A
2
s
藲C
藲C
I
O(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
1
T
hs
鈮?/div>
125藲C for thermal stability.
2
Neglecting switching and reverse current losses.
October 1994
1
Rev 1.100
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