BYS13鈥?0
Vishay
Semiconductors
ESD Safe 鈥?High Voltage Power Schottky 鈥?Rectifier
Features
D
D
D
D
D
D
High efficiency
Low forward voltage drop
Negligible switching losses
Low reverse current
High reverse surge capability
High ESD capability
15 811
Applications
High frequency SMPS
Free wheeling diode in low voltage converters
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Repeptive peak reverse voltage
Continuous reverse voltage
Average forward current
T
j
=76
擄
C, V
R
= 90V
Non鈥搑epeptive surge forward current
t
p
=10ms, half sinewave
ESD 鈥?IEC 1000鈥?鈥?
R = 330 , C = 150pF
Junction and storage temperature range
Type
Symbol
V
RRM
V
R
I
FAV
I
FSM
ESD
T
j
=T
stg
Value
90
90
1.5
75
20
鈥?5...+150
Unit
V
V
A
A
kV
擄
C
W
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction lead
T
L
=constant
Junction ambient Epoxy鈥揼lass hard tissue (see figure 1) 35 m * 17mm
2
copper area per electrode
Epoxy鈥揼lass hard tissue (see figure 2) 35 m * 50mm
2
copper area per electrode
Symbol
R
thJL
R
thJA
Value
25
150
125
Unit
K/W
K/W
m
m
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Junction Capacitance
Test Conditions
I
F
=100mA
I
F
=3A
I
F
=3A T
j
= 100
擄
C
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
擄
C
V
R
=4V, f = 1MHz
Type
Symbol
V
F
I
R
C
D
130
Min
Typ
850
700
Max
430
950
850
30
5
Unit
mV
m
A
mA
pF
Document Number 86065
Rev. 4, 25-Sep-00
www.vishay.com
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