BYG23M
Vishay Telefunken
Fast Silicon Mesa SMD Rectifier
Features
D
D
D
D
D
Glass passivated junction
Low reverse current
High reverse voltage
Fast reverse recovery time
Wave and reflow solderable
Applications
Freewheeling diodes in SMPS and converters
Snubber diodes
15 811
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current
t
p
=10ms, half sinewave
Average forward current
T
amb
= 65
擄
C
Junction and storage temperature range
Pulse energy in avalanche mode,
I
(BR)R
=1A
non repetitive (inductive load switch off)
Type
Symbol
V
R
=
V
RRM
I
FSM
I
FAV
T
j
=T
stg
E
R
Value
1000
30
1.5
鈥?5...+150
20
Unit
V
A
A
擄
C
mJ
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction case
Junction ambient
Test Conditions
mounted on epoxy鈥揼lass hard tissue,
17mm
2
35
m
m Cu
mounted on epoxy鈥揼lass hard tissue,
50mm
2
35
m
m Cu
mounted on Al鈥搊xid鈥揷eramic (Al
2
O
3
),
50mm
2
35
m
m Cu
Symbol
R
thJC
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Document Number 86062
Rev. 1, 13-Aug-99
www.vishay.de
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