BY527
Vishay Telefunken
Silicon Mesa Rectifier
Features
D
D
D
D
D
Controlled avalanche characteristics
Glass passivated junction
Hermetically sealed package
Low reverse current
High surge current capability
Applications
General purpose
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameters
Peak reverse voltage, non repetitive
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Junction and storage
temperature range
Test Conditions
Type
Symbol
V
RSM
V
R
I
FSM
I
FRM
I
FAV
P
R
E
R
i
2
*t
T
j
=T
stg
Value
1250
800
50
12
2
1000
20
8
鈥?5...+175
Unit
V
V
A
A
A
W
mJ
A
2
*s
t
p
=10ms,
half sinewave
蠒=180
擄
T
j
=175
擄
C, t
p
=20
m
s,
half sinus wave
I
(BR
V
)R
=1A, T
j
=175
擄
C
i
2
*t鈥搑ating
擄
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86007
Rev. 2, 24-Jun-98
www.vishay.de
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