BY228
Vishay Telefunken
Silicon Mesa Rectifier
Features
D
Glass passivated junction
D
Hermetically sealed package
Applications
High voltage rectifier
Efficiency diode in horizontal deflection circuits
94 9588
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
R
=V
RRM
I
FSM
I
FAV
T
j
T
stg
Value
1500
50
3
140
鈥?5...+150
Unit
V
A
A
擄
C
擄
C
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board with spacing 37.5mm
Symbol
R
thJA
Value
70
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Total reverse recovery time
Test Conditions
I
F
=5A
V
R
=1500V
V
R
=1500V, T
j
=140
擄
C
I
F
=1A, 鈥揹i
F
/dt=0.05A/
m
s
Symbol
V
F
I
R
I
R
t
rr
Min
Typ
2
Max
1.5
5
140
20
Unit
V
m
A
m
A
m
s
Document Number 86003
Rev. 2, 24-Jun-98
www.vishay.de
鈥?/div>
FaxBack +1-408-970-5600
1 (3)
next