BUZ73A Datasheet

IC型號：
BUZ73A
PDF描述：
5.8A, 200V, 0.600 Ohm, N-Channel Power MOSFET
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46.51KB
PDF頁數(shù)：
5頁
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INTERSIL

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BUZ73A

Semiconductor

Data Sheet

October 1998

File Number 2263.1

5.8A, 200V, 0.600 Ohm, N-Channel Power

MOSFET

Features

鈥?5.8A, 200V

[ /Title

This is an N-Channel enhancement mode silicon gate power

鈥?r

DS(ON)

= 0.600鈩?/div>

(BUZ73

鏗乪ld effect transistor designed for applications such as

鈥?SOA is Power Dissipation Limited

switching regulators, switching converters, motor drivers,

/Subject

relay drivers, and drivers for high power bipolar switching

鈥?Nanosecond Switching Speeds

(5.8A,

transistors requiring high speed and low gate drive power.

鈥?Linear Transfer Characteristics

This type can be operated directly from integrated circuits.

200V,

鈥?High Input Impedance

0.600

Formerly developmental type TA4600.

鈥?Majority Carrier Device

Ohm, N-

鈥?Related Literature

Channel

Ordering Information

- TB334 鈥淕uidelines for Soldering Surface Mount

PART NUMBER

PACKAGE

BRAND

Power

Components to PC Boards鈥?/div>

BUZ73A

TO-220AB

BUZ73A

MOS-

NOTE: When ordering, use the entire part number.

FET)

Symbol

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Packaging

Power

JEDEC TO-220AB

MOS-

SOURCE

FET,

DRAIN

GATE

TO-

DRAIN (FLANGE)

220AB)

/Creator

()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/UseOut-

lines

/DOC-

VIEW

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

漏

Harris Corporation 1998

制造商
Infineon
產(chǎn)品種類
MOSFET
晶體管極性
N-Channel
汲極/源極擊穿電壓
200 V
閘/源擊穿電壓
+/- 20 V
漏極連續(xù)電流
5.5 A
電阻汲極/源極 RDS（導(dǎo)通）
0.6 Ohms
配置
Single
最大工作溫度
+ 150 C
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-220AB
封裝
Tube
下降時間
30 ns
最小工作溫度
- 55 C
功率耗散
40 W
上升時間
40 ns
工廠包裝數(shù)量
50
典型關(guān)閉延遲時間
55 ns
零件號別名
BUZ73AXK

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