BUZ72A Datasheet

IC型號(hào)：
BUZ72A
PDF描述：
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
文件大?。?/label>
49.18KB
PDF頁數(shù)：
6頁
芯片廠家：
INTERSIL

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BUZ72A

Data Sheet

June 1999

File Number 2262.2

9A, 100V, 0.250 Ohm, N-Channel Power

MOSFET

This is an N-Channel enhancement mode silicon gate power

鏗乪ld effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Formerly developmental type TA17401.

Features

鈥?9A, 100V

鈥?r

DS(ON)

= 0.250鈩?/div>

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?Majority Carrier Device

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

BUZ72A

PACKAGE

TO-220AB

BRAND

BUZ72A

NOTE: When ordering, use the entire part number.

Symbol

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

4-23

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

制造商
Fairchild Semiconductor
晶體管極性
N-Channel
汲極/源極擊穿電壓
100 V
閘/源擊穿電壓
+/- 20 V
漏極連續(xù)電流
9 A
電阻汲極/源極 RDS（導(dǎo)通）
0.25 Ohms
配置
Single
最大工作溫度
+ 150 C
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-220AB
下降時(shí)間
55 ns
最小工作溫度
- 55 C
功率耗散
40 W
上升時(shí)間
45 ns
典型關(guān)閉延遲時(shí)間
70 ns

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