BUZ60 Datasheet

IC型號：
BUZ60
PDF描述：
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
文件大小：
45.08KB
PDF頁數(shù)：
5頁
芯片廠家：
INTERSIL

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BUZ60

Semiconductor

Data Sheet

October 1998

File Number 2260.1

5.5A, 400V, 1.000 Ohm, N-Channel Power

MOSFET

Features

鈥?5.5A, 400V

[ /Title

This is an N-Channel enhancement mode silicon gate power

鈥?r

DS(ON)

= 1.000鈩?/div>

(BUZ60

鏗乪ld effect transistor designed for applications such as

鈥?SOA is Power Dissipation Limited

)

switching regulators, switching converters, motor drivers,

/Sub-

鈥?Nanosecond Switching Speeds

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

ject

鈥?Linear Transfer Characteristics

This type can be operated directly from integrated circuits.

(5.5A,

鈥?High Input Impedance

400V,

Formerly developmental type TA17414.

鈥?Majority Carrier Device

1.000

Ordering Information

鈥?Related Literature

Ohm,

- TB334 鈥淕uidelines for Soldering Surface Mount

PACKAGE

BRAND

N-Chan-

PART NUMBER

Components to PC Boards鈥?/div>

BUZ60

TO-220AB

BUZ60

nel

Power

NOTE: When ordering, use the entire part number.

Symbol

MOS-

FET)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

Packaging

tor, N-

JEDEC TO-220AB

Chan-

SOURCE

nel

DRAIN

GATE

Power

DRAIN (FLANGE)

MOS-

FET,

TO-

220AB)

/Cre-

ator ()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/Use-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

漏

Harris Corporation 1998

型號

版本

描述

廠商

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5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET

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