PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-220AB
TYPE: BUZ50A
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain 鈥?Source Voltage
Drain 鈥?Gate Voltage
Drain Current 鈥?Continuous
Drain Current 鈥?Pulsed
Gate 鈥?Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
ELECTRICAL CHARACTERISTICS TA @ 25擄C
擄
Parameters
Symbol
Test Conditions
Drain Source
BVDSS V
GS
= 0V, I
D
= .25mA
Breakdown Voltage
Gate Threshold Voltage VGS(th) V
DS
= V
GS
, I
D
= 1.0mA
Gate 鈥?Body Leakage
Current
Zero Gate Voltage
Drain Current
On State Drain Current
Drain Source On-
Resistance
Forward
Transconductance
Drain-Source On
Voltage
Drain-Source-On
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
IGSS
IDSS
ID(on)
rDS(on)
gFS
VDS(on)
VDS(on)
Ciss
Coss
Crss
V
GS
= 0V, V
DS
= 25V, f = 1 MHz
2100
120
50
V
GS
= 10V, I
D
= 1.5A
V
DS
= 25V, I
D
= 1.5A
0.7
5.0
V
GS
=
鹵
20V, V
DS
= 0V
V
DS
= 1000V, V
GS
= 0V,
V
DS
= 1000V, V
GS
= 0V, T
J
= 125擄C
VDSS
VDGR
ID
IDM
VGS
PD
IL
TJ & Tstg
TL
1000
1000
2.5
10
鹵20
75
-55 to +150
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
擄C
擄C
Min
1000
2.1
Typ
Max
Unit
Vdc
Vdc
nA
mA
mA
Adc
Ohms
mhos
Vdc
Vdc
pF
pF
pF
4.0
100
0.25
1.0
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