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BUZ45A Datasheet

  • BUZ45A

  • 8.3A, 500V, 0.800 Ohm, N-Channel Power MOSFET

  • 1頁(yè)

  • INTERSIL   INTERSIL

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BUZ45A
Semiconductor
Data Sheet
October 1998
File Number 2258.1
8.3A, 500V, 0.800 Ohm, N-Channel Power
MOSFET
Features
鈥?8.3A, 500V
[ /Title
This is an N-Channel enhancement mode silicon gate power
鈥?r
DS(ON)
= 0.800鈩?/div>
(BUZ45
鏗乪ld effect transistor designed for applications such as
鈥?SOA is Power Dissipation Limited
A)
switching regulators, switching converters, motor drivers,
/Subject
relay drivers, and drivers for high power bipolar switching
鈥?Nanosecond Switching Speeds
(8.3A,
transistors requiring high speed and low gate drive power.
鈥?Linear Transfer Characteristics
This type can be operated directly from integrated circuits.
500V,
鈥?High Input Impedance
0.800
Formerly developmental type TA17425.
鈥?Majority Carrier Device
Ohm, N-
Channel
Ordering Information
Symbol
PART NUMBER
PACKAGE
BRAND
Power
BUZ45A
TO-204AA
BUZ45A
MOS-
D
NOTE: When ordering, use the entire part number.
FET)
/Author
G
()
/Key-
S
words
(Harris
Semi-
conduc-
tor, N-
Packaging
Channel
JEDEC TO-204AA
Power
MOS-
FET,
DRAIN
(FLANGE)
TO-
204AA)
/Creator
()
/DOCIN
FO pdf-
SOURCE (PIN 2)
GATE (PIN 1)
mark
[ /Page-
Mode
/UseOut-
lines
/DOC-
VIEW
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
Harris Corporation 1998

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