BUZ41A Datasheet

IC型號：
BUZ41A
PDF描述：
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
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BUZ41A

Semiconductor

Data Sheet

October 1998

File Number 2256.1

4.5A, 500V, 1.500 Ohm, N-Channel Power

MOSFET

Features

鈥?4.5A, 500V

[ /Title

This is an N-Channel enhancement mode silicon gate power

鈥?r

DS(ON)

= 1.500鈩?/div>

(BUZ41

鏗乪ld effect transistor designed for applications such as

鈥?SOA is Power Dissipation Limited

switching regulators, switching converters, motor drivers,

/Sub-

鈥?Nanosecond Switching Speeds

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

ject

鈥?Linear Transfer Characteristics

This type can be operated directly from integrated circuits.

(4.5A,

鈥?High Input Impedance

500V,

Formerly developmental type TA17415.

鈥?Majority Carrier Device

1.500

Ordering Information

鈥?Related Literature

Ohm,

- TB334 鈥淕uidelines for Soldering Surface Mount

PACKAGE

BRAND

N-Chan-

PART NUMBER

Components to PC Boards鈥?/div>

BUZ41A

TO-220AB

BUZ41A

nel

Power

NOTE: When ordering, use the entire part number.

Symbol

MOS-

FET)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

Packaging

tor, N-

JEDEC TO-220AB

Chan-

SOURCE

nel

DRAIN

Power

GATE

MOS-

DRAIN (FLANGE)

FET,

TO-

220AB)

/Cre-

ator ()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/Use-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

漏

Harris Corporation 1998

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