BUZ32 Datasheet

IC型號(hào)：
BUZ32
PDF描述：
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
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BUZ32

Semiconductor

Data Sheet

October 1998

File Number 2416.1

9.5A, 200V, 0.400 Ohm, N-Channel Power

MOSFET

Features

鈥?9.5A, 200V

[ /Title

This is an N-Channel enhancement mode silicon gate power

鈥?r

DS(ON)

= 0.400鈩?/div>

(BUZ32)

鏗乪ld effect transistor designed for applications such as

鈥?SOA is Power Dissipation Limited

/Subject

switching regulators, switching converters, motor drivers,

鈥?Nanosecond Switching Speeds

(9.5A,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

200V,

鈥?Linear Transfer Characteristics

This type can be operated directly from integrated circuits.

0.400

鈥?High Input Impedance

Ohm, N-

Formerly developmental type TA17412.

鈥?Majority Carrier Device

Channel

鈥?Related Literature

Power

Ordering Information

- TB334 鈥淕uidelines for Soldering Surface Mount

PART NUMBER

PACKAGE

BRAND

MOS-

Components to PC Boards鈥?/div>

BUZ32

TO-220AB

BUZ32

FET)

/Author

NOTE: When ordering, use the entire part number.

Symbol

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

Packaging

MOS-

JEDEC TO-220AB

FET,

TO-

SOURCE

DRAIN

220AB)

GATE

/Creator

DRAIN (FLANGE)

()

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/UseOut-

lines

/DOC-

VIEW

pdfmark

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

漏

Harris Corporation 1998

制造商
Infineon
產(chǎn)品種類
MOSFET
晶體管極性
N-Channel
汲極/源極擊穿電壓
200 V
閘/源擊穿電壓
+/- 20 V
漏極連續(xù)電流
9.5 A
電阻汲極/源極 RDS（導(dǎo)通）
0.4 Ohms
配置
Single
最大工作溫度
+ 150 C
安裝風(fēng)格
Through Hole
封裝 / 箱體
TO-220AB
封裝
Tube
下降時(shí)間
30 ns
最小工作溫度
- 55 C
功率耗散
75 W
上升時(shí)間
40 ns
工廠包裝數(shù)量
50
典型關(guān)閉延遲時(shí)間
55 ns
零件號(hào)別名
BUZ32XK

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