Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUX87-1100
GENERAL DESCRIPTION
High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the
dynamic focus circuit of televisions and monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
MAX.
1100
700
0.5
1
46
UNIT
V
V
A
A
W
T
mb
鈮?/div>
25 藲C
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
emitter
collector
base
collector
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current (peak value) t
p
= 2 ms
Base current (DC)
Base current (peak value)
Reverse base current (peak value)
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-40
-
MAX.
1100
700
0.5
1
0.2
0.3
0.3
46
150
150
UNIT
V
V
A
A
A
A
A
W
藲C
藲C
T
mb
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
60
MAX.
2.7
-
UNIT
K/W
K/W
1
Turn-off current.
November 1999
1
Rev 1.000
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