鈥?/div>
V
CES(sus)
1000 V
Fall time = 0.3
碌s
(typ) at I
C
= 1.0 A
V
CE(sat)
= 1.0 V (max) at I
C
= 1.0 A, I
B
= 0.2 A
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MAXIMUM RATINGS
Rating
Symbol
BUX84
400
800
BUX85
450
Unit
Vdc
Vdc
Vdc
Adc
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter Base Voltage
Collector Current
鈥?Continuous
鈥?Peak (1)
Base Current
鈥?Continuous
鈥?Peak (1)
V
CEO(sus)
V
CES
1000
V
EBO
I
C
I
CM
I
B
I
BM
I
BM
P
D
5
2
3.0
Adc
0.75
1.0
1
Reverse Base Current 鈥?Peak
Adc
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
50
400
Watts
mW/_C
_C
T
J
, T
stg
鈥?5 to +150
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
R
胃JA
T
L
Max
2.5
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purpose:
1/8鈥?from Case for 5 Seconds
_C/W
_C/W
_C
62.5
275
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
x10%.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 9
Publication Order Number:
BUX85/D
1
2
3
4
