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BUV48/D Datasheet

  • BUV48/D

  • SWITCHMODE II Series NPN Silicon Power Transistors

  • 8頁

  • ETC

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ON Semiconductort
SWITCHMODEt II Series
NPN Silicon Power Transistors
The BUV48/BUV48A transistors are designed for high鈥搗oltage,
high鈥搒peed, power switching in inductive circuits where fall time is
critical. They are particularly suited for line鈥搊perated
SWITCHMODE applications such as:
BUV48
BUV48A
15 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
V
(BR)CEO
850鈥?000 VOLTS
V
(BR)CEX
150 WATTS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Fast Turn鈥揙ff Times
60 ns Inductive Fall Time 鈥?25_C (Typ)
120 ns Inductive Crossover Time 鈥?25_C (Typ)
鈥?/div>
Operating Temperature Range 鈥?5 to +175_C
鈥?/div>
100_C Performance Specified for:
Reverse鈥揃iased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltage
Leakage Currents (125_C)
CASE 340D鈥?2
TO鈥?18 TYPE
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MAXIMUM RATINGS
Rating
Symbol
BUV48
400
850
BUV48A
450
Unit
Vdc
Vdc
Vdc
Adc
Collector鈥揈mitter Voltage
V
CEO(sus)
V
CEX
V
EB
I
C
I
CM
I
OI
I
B
I
BM
P
D
Collector鈥揈mitter Voltage (V
BE
= 鈥?.5 V)
Emitter Base Voltage
1000
7
Collector Current 鈥?Continuous
鈥?Peak (1)
鈥?Overload
Base Current 鈥?Continuous
鈥?Peak (1)
15
30
60
5
20
Adc
Total Power Dissipation 鈥?T
C
= 25_C
鈥?T
C
= 100_C
Derate above 25_C
150
75
1
Watts
W/_C
_C
Operating and Storage Junction Temperature Range
T
J
, T
stg
鈥?5 to +175
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
T
L
Max
1
Unit
Thermal Resistance, Junction to Case
_C/W
_C
Maximum Lead Temperature for Soldering Purposes:
1/8鈥?from Case for 5 Seconds
275
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v
10%.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 10
Publication Order Number:
BUV48/D

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