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BUV11 Datasheet

  • BUV11

  • SITCHMODE Series NPN Silicon Power Transistor

  • 4頁

  • ONSEMI

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鈥?/div>
High DC current gain; hFE min. = 20 at IC = 6 A
鈥?/div>
Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A
鈥?/div>
Very fast switching times:
TF max. = 0.8
碌s
at IC = 12 A
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25
_
C
Base鈥揅urrent continuous
Collector鈥揅urrent鈥?Continuous
鈥?Peak (pw
10 ms)
Collector鈥揈mitter Voltage (RBE = 100
鈩?
Collector鈥揈mitter Voltage (VBE = 鈥?.5 V)
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
SWITCHMODE is a trademark of Motorola, Inc.
. . . designed for high current, high speed, high power applications.
SWITCHMODE Series
NPN Silicon Power Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
v
1.0
0.2
DERATING FACTOR
0.4
0.6
0.8
0
40
Figure 1. Power Derating
80
120
TC, TEMPERATURE (擄C)
VCEO(sus)
Symbol
Symbol
TJ, Tstg
VCBO
VCER
VEBO
VCEX
IC
ICM
JC
PD
IB
160
200
鈥?65 to 200
Value
1.17
Max
150
240
250
250
200
20
25
4
7
20 AMPERES
NPN SILICON
POWER
METAL TRANSISTOR
200 VOLTS
150 WATTS
BUV11
Order this document
by BUV11/D
CASE 1鈥?7
TO鈥?04AA
(TO鈥?)
Watts
_
C/W
Unit
Unit
Adc
Adc
Apk
Vdc
Vdc
Vdc
Vdc
Vdc
_
C
1

BUV11相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    SITCHMODE Series NPN Silicon Power Transistor
    ONSEMI
  • 英文版
    20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 ...
    MOTOROLA
  • 英文版
    isc Silicon NPN Power Transistor
    ISC [Incha...
  • 英文版
    SITCHMODE Series NPN Silicon Power Transistor
    ONSEMI [ON...
  • 英文版
    20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 ...
    MOTOROLA [...
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO3 Metal Packag...
    SEME-LAB
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO3 Metal Packag...
    SEME-LAB [...
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 90A I(C) | TO-3
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50A I(C) | TO-3
    ETC
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO3 Metal Packag...
    SEME-LAB
  • 英文版
    Bipolar NPN Device in a Hermetically sealed TO3 Metal Packag...
    SEME-LAB [...
  • 英文版
    TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | TO-204AA
    ETC
  • 英文版
    NPN
    ETC
  • 英文版
    SWITCHMODE Series NPN Silicon Power Transistor
    ETC
  • 英文版
    20 AMPERES NPN SILICON

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