Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope
specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Inductive fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
MAX.
850
400
5
10
32
2.0
0.1
UNIT
V
V
A
A
W
V
碌s
T
hs
鈮?/div>
25 藲C
I
C
= 3.0 A; I
B
= 0.4 A
I
Con
= 3.0 A; I
Bon
= 0.3 A
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
850
400
5
10
2
4
32
150
150
UNIT
V
V
A
A
A
A
W
藲C
藲C
T
hs
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heat sink
Junction to ambient
in free air
CONDITIONS
TYP.
-
-
MAX.
3.95
55
UNIT
K/W
K/W
March 1996
1
Rev 1.000
next