BUT12AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a
metal envelope ,primarily for use in switching power
circuits.
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS
V
BE
= 0V
MIN
MAX
1000
450
8
20
100
1.5
UNIT
V
V
A
A
W
V
A
V
s
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
T
mb
25
I
C
= 6.0A; I
B
= 1.2A
f = 16KHz
I
C
=6A,I
B1
=-I
=1.2A,V
CC
=150V
1.0
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage(open collector)
Collector current (DC)
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
Tmb 25
-55
MAX
1000
450
5
8
4
8
40
150
150
UNIT
V
V
V
A
A
A
W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CE
I
CES
V
CEOsust
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
PARAMETER
Collector-emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
V
BE
= 0V; V
CE
= V
CESMmax
V
BE
= 0V; V
CE
= V
CESMmax
T
j
= 125
I
B
= 0A; I
C
= 100mA
L = 25mH
I
C
= 6.0A; I
B
= 1.2A
I
C
= 6.0A; I
B
= 1.2A
I
C
= 1.0A; V
CE
= 5V
I
C
= 0.1A; V
CE
= 10V
V
CB
= 10V
I
C
=6A,I
B1
=-I
B2
=1.2A,V
CC
=150V
I
C
=6A,I
B1
=-I
B2
=1.2A,V
CC
=150V
MIN
MAX
1.0
2.0
UNIT
mA
mA
V
10
5
1.5
1.5
50
V
V
V
MHz
pF
s
s
5.0
1.0
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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