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BUT11APX Datasheet

  • BUT11APX

  • Silicon Diffused Power Transistor

  • 8頁(yè)

  • PHILIPS

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
3.5
145
MAX.
1000
1000
450
5
10
32
1.5
-
160
UNIT
V
V
V
A
A
W
V
A
ns
T
hs
鈮?/div>
25 藲C
I
Csat
=2.5A,I
B1
=0.5A,I
B2
=0.8A
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
1000
5
10
2
4
32
150
150
UNIT
V
V
V
A
A
A
A
W
藲C
藲C
T
hs
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
September 1998
1
Rev 1.000

BUT11APX 產(chǎn)品屬性

  • NXP

  • Transistors Bipolar (BJT)

  • NPN

  • 450 V

  • 5 A

  • 10

  • Single

  • + 150 C

  • SMD/SMT

  • SOT-186A

  • Rail

  • 5 A

  • - 65 C

  • 32000 mW

  • 50

  • BUT11APX,127

BUT11APX相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    NPN SILICON POWER TRANSISTOR
    POINN
  • 英文版
    High Voltage Power Switching Applications
    FAIRCHILD
  • 英文版
    NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICAT...
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  • 英文版
    Silicon diffused power transistors
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  • 英文版
    NPN SILICON POWER TRANSISTOR
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    isc Silicon NPN Power Transistor
    ISC [Incha...
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    Silicon NPN Power Transistors
    SAVANTIC [...
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    Silicon diffused power transistors
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    NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICAT...
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  • 英文版
    NPN SILICON POWER TRANSISTOR
    POINN [Pow...
  • 英文版
    NPN SILICON POWER TRANSISTOR
    TRSYS [TRS...
  • 英文版
    High Voltage Power Switching Applications
    FAIRCHILD ...
  • 英文版
    High Voltage Power Switching Applications
    FAIRCHILD
  • 英文版
    SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
    WINGS
  • 英文版
    Silicon diffused power transistors
    PHILIPS
  • 英文版
    isc Silicon NPN Power Transistor
    ISC [Incha...
  • 英文版
    Silicon NPN Power Transistors
    SAVANTIC [...
  • 英文版
    Silicon diffused power transistors
    PHILIPS [P...
  • 英文版
    SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
    WINGS [Win...
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    High Voltage Power Switching Applications
    FAIRCHILD ...

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