BUR52
HIGH CURRENT NPN SILICON TRANSISTOR
s
s
s
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
MAINTAINS GOOD SWITCHING
PERFORMANCE EVEN WITHOUT
NEGATIVE BASE DRIVE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUR52 is a silicon multiepitaxial planar NPN
transistors in modified Jedec TO-3 metal case,
intented for use in switching and linear
applications in military and industrial equipment.
1
2
TO-3
(version " P ")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
June 1997
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Total Dissipation at T
c
鈮?/div>
25 C
o
Value
350
250
10
60
80
16
350
-65 to 200
200
Unit
V
V
V
A
A
A
W
o
o
Storage Temperature
Max. Operating Junction Temperature
C
C
1/4
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