BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright 漏 1999, Power Innovations Limited, UK
MAY 1999 - REVISED SEPTEMBER 1999
G
Designed for Self Oscillating Inverter
Applications
Rugged 1500 V Planar Construction
Integral Free-Wheeling Anti-Parallel Diode
B
C
E
TO-220 PACKAGE
(TOP VIEW)
G
G
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
device symbol
C
B
E
absolute maximum ratings at 25擄C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (I
B
= 0)
Collector-emitter voltage (V
BE
= 0)
Emitter-base voltage (I
C
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25擄C case temperature
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTE
1: This value applies for t
p
=
10 ms, duty cycle
鈮?/div>
2%.
SYMBOL
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
T
L
VALUE
700
1500
11
2
2.5
2
2.5
50
-55 to +125
-55 to +150
300
UNIT
V
V
V
A
A
A
A
W
擄C
擄C
擄C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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