BUP 603D
IGBT With Antiparallel Diode
Preliminary data
鈥?Low forward voltage drop
鈥?High switching speed
鈥?Low tail current
鈥?Latch-up free
鈥?Including fast free-wheel diode
Pin 1
G
Type
BUP 603D
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
Symbol
Values
600
600
Unit
V
Pin 2
C
Ordering Code
Q67040-A4230-A2
Pin 3
E
V
CE
600V
I
C
42A
Package
TO-218 AB
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 k鈩?/div>
Gate-emitter voltage
DC collector current, (limited by bond wire)
鹵 20
A
42
32
T
C
= 60 擄C
T
C
= 90 擄C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
104
64
T
C
= 25 擄C
T
C
= 90 擄C
Diode forward current
I
F
31
T
C
= 90 擄C
Pulsed diode current,
t
p
= 1 ms
I
Fpuls
180
T
C
= 25 擄C
Power dissipation
P
tot
200
W
- 55 ... + 150
- 55 ... + 150
擄C
T
C
= 25 擄C
Chip or operating temperature
Storage temperature
T
j
T
stg
Semiconductor Group
1
Dec-02-1996
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