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BULD25SL Datasheet

  • BULD25SL

  • NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

  • 280.38KB

  • 12頁

  • POINN

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BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright 漏 1997, Power Innovations Limited, UK
JULY 1994 - REVISED SEPTEMBER 1997
q
Designed Specifically for High Frequency
Electronic Ballasts
Integrated Fast t
rr
Anti-parallel Diode,
Enhancing Reliability
Diode t
rr
Typically 500 ns
New Ultra Low-Height SOIC Power Package
Tightly Controlled Transistor Storage Times
Voltage Matched Integrated Transistor and
Diode
Characteristics Optimised for Cool Running
B
B
NC
NC
E
D PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
q
C
C
C
C
q
q
q
q
NC - No internal connection
SL PACKAGE
(TOP VIEW)
1
2
3
q
q
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
Custom Switching Selections Available
Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
Single-in-line
PART # SUFFIX
D
DR
SL
C
E
q
q
device symbol
C
B
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB鈥檚). This range of
E
switching transistors has tightly controlled
storage times and an integrated fast t
rr
anti-parallel diode. The revolutionary design ensures that the diode
has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel
diode plus transistor.
The integrated diode has minimal charge coupling with the transistor, increasing frequency stability,
especially in lower power circuits where the circulating currents are low. By design, this new device offers a
voltage matched integrated transistor and anti-parallel diode.
This device is available in the now well established 8 pin low height surface mount D package, and the TO-
220 pin compatible SL package. Use of the SL package allows for a 40% height saving, making it ideal for
compact ballast applications.
absolute maximum ratings at 25擄C ambient temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
SYMBOL
V
CES
V
CBO
V
CEO
V
EBO
VALUE
600
600
400
9
UNIT
V
V
V
V
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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