BUL770
NPN SILICON POWER TRANSISTOR
Copyright 漏 1997, Power Innovations Limited, UK
JULY 1991 - REVISED SEPTEMBER 1997
q
Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
h
FE
7 to 21 at V
CE
= 1 V, I
C
= 800 mA
Low Power Losses (On-state and Switching)
Key Parameters Characterised at High
Temperature
Tight and Reproducible Parametric
Distributions
B
C
E
TO-220 PACKAGE
(TOP VIEW)
q
q
q
1
2
3
q
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25擄C ambient temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25擄C case temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for t
p
= 10 ms, duty cycle
鈮?/div>
2%.
2. This value applies for t
p
= 300 碌s, duty cycle
鈮?/div>
2%.
SYMBOL
V
CES
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
CM
I
B
I
BM
P
tot
T
j
T
stg
VALUE
700
700
400
9
2.5
6
8
1.5
2.5
50
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
A
W
擄C
擄C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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1
2
3
4
5
6
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