BUL72A Datasheet

IC型號(hào)：
BUL72A
PDF描述：
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN...
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24.92KB
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2頁(yè)
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SEME-LAB

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LAB

MECHANICAL DATA

Dimensions in mm

0.32

0.24

SEME

BUL72A

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

13擄

0.10

0.02

16擄

max.

1.70

max.

10擄

max.

6.7

6.3

3.1

2.9

Designed for use in

electronic ballast applications

鈥?/div>

SEMEFAB DESIGNED AND DIFFUSED DIE

HIGH VOLTAGE

FAST SWITCHING

HIGH ENERGY RATING

3.7 7.3

3.3 6.7

1.05

0.85

2.30

4.60

0.80

0.60

FEATURES

鈥?Multi鈥揵ase for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

Pin 3 - Emitter

SOT-223

Pin 1 - Base

Pin 2 - Collector

Pin 4 - Collector

鈥?Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

鈥?Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS

case

= 25擄C unless otherwise stated)

CBO

CEO

EBO

C(PK)

tot

stg

Semelab plc.

Collector 鈥?Base Voltage(I

=0)

Collector 鈥?Emitter Voltage (I

= 0)

Emitter 鈥?Base Voltage (I

= 0)

Continuous Collector Current

Peak Collector Current

Base Current

Total Dissipation at T

case

= 25擄C

Operating and Storage Temperature Range

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

350V

160V

10V

12A

鈥?5 to +150擄C

Prelim. 2/97

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