LAB
MECHANICAL DATA
Dimensions in mm
0.32
0.24
SEME
BUL70A
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
13擄
0.10
0.02
16擄
max.
1.70
max.
10擄
max.
6.7
6.3
3.1
2.9
Designed for use in
electronic ballast applications
鈥?SEMEFAB DESIGNED AND DIFFUSED DIE
鈥?HIGH VOLTAGE
鈥?FAST SWITCHING
鈥?HIGH ENERGY RATING
鈥?SURFACE MOUNT FOOT PRINT
4
3.7 7.3
3.3 6.7
1
2
3
1.05
0.85
2.30
4.60
0.80
0.60
FEATURES
鈥?Multi鈥揵ase for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
鈥?Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
鈥?Triple Guard Rings for improved control of
high voltages.
SOT-223
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Pin 4 - Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Semelab plc.
Collector 鈥?Base Voltage(I
E
=0)
Collector 鈥?Emitter Voltage (I
B
= 0)
Emitter 鈥?Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25擄C
Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1000V
500V
10V
4A
7A
2A
3W
鈥?5 to +150擄C
Prelim. 2/97
1
2
